With the newest 3.3 kV discrete SiC MOSFET being released, Current Source Inverters (CSI) are able to be adapted to 1.5 kVOC PV strings and substitute actual voltage source-based conversion systems. In order to characterize the switching performances of these new devices, a Double-Pulse Test (DPT) circuit has been developed. The tested switching cell is based on 3.3 kV / 120 m█ TO-263-7 discrete MOSFETs using synchronous rectification mode. This configuration implies some challenges and introduces extra body diode reverse recovery losses. This paper discusses the main choices, methods, issues and results concerning the switching event for future CSI using 3.3 kV SiC MOSFETs.